Video 4k e riproduzione su dispositivi

[Archetipo]

Un portatile per fare video editing ... hmm... onestamente ti consiglierei di utilizzare un desktop, i portatili li vedo bene solo nel caso fossi sempre in giro, scaldano molto, sono molto cari in confronto ai desktop, non hanno cmq la potenza per fare seriamente video editing (a meno che tu non sia disposto a spendere 3000 euro per un super portatile).
Il problema del 4K è nel codec che viene utilizzato, per video in h264 in 4K con la mia panasonic G7 a 100mbits ad esempio non ho mai avuto problemi anche in passato con configurazioni meno potenti.Diverso è il discorso con l'HEVC, cambia molto dal punto di vista di elaborazione, ti assicuro che sono molto pesanti da elaborare i video in H265 a 100mbits del Phantom 4 PRO! e ho un i7 con 32GB di ram e una Radeon 580. Ignoro la versione del codec HEVC dell'Iphone e del suo bitrate.

Windows 10 non fa schifo... è un sistema più nuovo rispetto all'ottimo Win7, il che significa che ha drivers aggiornati, ottimizzazioni native (trim per gli ssd..ecc..).

[Grillo71]

Buongiorno Archetipo, se dici che è il codec che fa' la diferenza, quali consigli idi usare per avere la massima qualità e non avere dei filmati troppo pesante?
Per un Mac che cosa consigli?

[geeno88]

ma a me non interessa l'editing.. interessa solo riprodurli in maniera fluida.

cmq reistallato windows 7 pulito, istallati k-lite, niente, video in 4k ancora a scatti...

vi allego le caratteristiche dettagliate del mio portatile, magari sapete dirmi cosa c'è che non va..

CPU Unit Count]
Number Of Processor Packages (Physical): 1
Number Of Processor Cores: 4
Number Of Logical Processors: 8

Intel Core i7-2670QM

[General Information]
Processor Name: Intel Core i7-2670QM
Original Processor Frequency: 2200.0 MHz
Original Processor Frequency [MHz]: 2200
CPU ID: 000206A7
CPU Brand Name: Intel(R) Core(TM) i7-2670QM CPU @ 2.20GHz
CPU Vendor: GenuineIntel
CPU Stepping: D2
CPU Code Name: Sandy Bridge-MB SV
CPU Technology: 32 nm
CPU S-Spec: SR02N
CPU Thermal Design Power (TDP): 45.0 W
CPU IA Cores Thermal Design Current (TDC): 97.5 A
CPU GT Cores Thermal Design Current (TDC): 32.5 A
CPU Power Limits (Max): Power = 72.00 W, Time = 64.00 sec
CPU Power Limit 1 - Long Duration: Power = 45.00 W, Time = 28.00 sec [Unlocked]
CPU Power Limit 2 - Short Duration: Power = 45.00 W, Time = Unlimited [Unlocked]
CPU Max. Junction Temperature (Tj,max): 100 °C
CPU Type: Production Unit
CPU Platform: Socket G2 (rPGA988B)
Microcode Update Revision: 25
Number of CPU Cores: 4
Number of Logical CPUs: 8
[Operating Points]
CPU LFM (Minimum): 800.0 MHz = 8 x 100.0 MHz
CPU HFM (Base): 2200.0 MHz = 22 x 100.0 MHz
CPU Turbo Max: 3100.0 MHz = 31 x 100.0 MHz [Locked]
Turbo Ratio Limits: 31x (1c), 30x (2c), 28x (3-4c)
CPU Current: 2394.8 MHz = 24 x 99.8 MHz @ 1.1409 V
CPU Bus Type: Intel Direct Media Interface (DMI) v2.0
Maximum DMI Link Speed: 5.0 GT/s
Current DMI Link Speed: 5.0 GT/s
[Cache and TLB]
L1 Cache: Instruction: 4 x 32 KBytes, Data: 4 x 32 KBytes
L2 Cache: Integrated: 4 x 256 KBytes
L3 Cache: 6 MBytes
[Standard Feature Flags]
[Extended Feature Flags]
[Enhanced Features]
[CPU SNB Features]
[Memory Ranges]
[MTRRs]

Memory

[General information]
Total Memory Size: 8 GBytes
Total Memory Size [MB]: 8192
[Current Performance Settings]
Maximum Supported Memory Clock: 666.7 MHz
Current Memory Clock: 665.2 MHz
Current Timing (tCAS-tRCD-tRP-tRAS): 9-9-9-24
Memory Runs At: Dual-Channel
Command Rate: 1T
Read to Read Delay (tRD_RD) Different Rank: 1T
Read to Read Delay (tRD_RD) Different DIMM: 3T
Write to Write Delay (tWR_WR) Different Rank: 3T
Write to Write Delay (tWR_WR) Different DIMM: 3T
Read to Write Delay (tRD_WR) Same Rank: 3T
Read to Write Delay (tRD_WR) Different Rank: 3T
Read to Write Delay (tRD_WR) Different DIMM: 3T
Write to Read Delay (tWR_RD) Same Rank (tWTR): 5T
Write to Read Delay (tWR_RD) Different Rank: 1T
Write to Read Delay (tWR_RD) Different DIMM: 1T
Read to Precharge Delay (tRTP): 5T
Write to Precharge Delay (tWTP): 21T
Write Recovery Time (tWR): 10T
RAS# to RAS# Delay (tRRD): 4T
Refresh Cycle Time (tRFC): 107T
Four Activate Window (tFAW): 20T

Row: 0 - 4 GB PC3-10600 DDR3 SDRAM Nanya Technology NT4GC64B8HB0NS-CG

[General Module Information]
Module Number: 0
Module Size: 4 GBytes
Memory Type: DDR3 SDRAM
Module Type: SO-DIMM
Memory Speed: 666.7 MHz (DDR3-1333 / PC3-10600)
Module Manufacturer: Nanya Technology
Module Part Number: NT4GC64B8HB0NS-CG
Module Revision: 0
Module Serial Number: 286975368
Module Manufacturing Date: Year: 2011, Week: 11
Module Manufacturing Location: 19
SDRAM Manufacturer: Nanya Technology
Error Check/Correction: None
[Module characteristics]
Row Address Bits: 15
Column Address Bits: 10
Number Of Banks: 8
Module Density: 2048 Mb
Number Of Ranks: 2
Device Width: 8 bits
Bus Width: 64 bits
Module Nominal Voltage (VDD): 1.5 V
[Module timing]
Minimum SDRAM Cycle Time (tCKmin): 1.500 ns
CAS# Latencies Supported: 5, 6, 7, 8, 9
Minimum CAS# Latency Time (tAAmin): 13.125 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.125 ns
Minimum Row Precharge Time (tRPmin): 13.125 ns
Minimum Active to Precharge Time (tRASmin): 36.000 ns
Supported Module Timing at 666.7 MHz: 9-9-9-24
Supported Module Timing at 600.0 MHz: 8-8-8-22
Supported Module Timing at 533.3 MHz: 7-7-7-20
Supported Module Timing at 466.7 MHz: 7-7-7-17
Supported Module Timing at 400.0 MHz: 6-6-6-15
Supported Module Timing at 333.3 MHz: 5-5-5-12
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns
Minimum Active to Active/Refresh Time (tRCmin): 49.125 ns
Minimum Refresh Recovery Time Delay (tRFCmin): 160.000 ns
Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns
[Features]
Partial Array Self Refresh (PASR): Not Supported
On-die Thermal Sensor (ODTS) Readout: Not Supported
Auto Self Refresh (ASR): Supported
Extended Temperature 1X Refresh Rate: Not Supported
Extended Temperature Range: Supported
Module Temperature Sensor: Not Supported
Pseudo Target Row Refresh (pTRR): Not Supported
Module Nominal Height: 29 - 30 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm

Row: 2 - 4 GB PC3-10600 DDR3 SDRAM Samsung M471B5273CH0-CH9

[General Module Information]
Module Number: 2
Module Size: 4 GBytes
Memory Type: DDR3 SDRAM
Module Type: SO-DIMM
Memory Speed: 666.7 MHz (DDR3-1333 / PC3-10600)
Module Manufacturer: Samsung
Module Part Number: M471B5273CH0-CH9
Module Revision: 0
Module Serial Number: 3086550209
Module Manufacturing Date: Year: 2012, Week: 1
Module Manufacturing Location: 2
SDRAM Manufacturer: Samsung
Error Check/Correction: None
[Module characteristics]
Row Address Bits: 15
Column Address Bits: 10
Number Of Banks: 8
Module Density: 2048 Mb
Number Of Ranks: 2
Device Width: 8 bits
Bus Width: 64 bits
Module Nominal Voltage (VDD): 1.5 V
[Module timing]
Minimum SDRAM Cycle Time (tCKmin): 1.500 ns
CAS# Latencies Supported: 5, 6, 7, 8, 9
Minimum CAS# Latency Time (tAAmin): 13.125 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.125 ns
Minimum Row Precharge Time (tRPmin): 13.125 ns
Minimum Active to Precharge Time (tRASmin): 36.000 ns
Supported Module Timing at 666.7 MHz: 9-9-9-24
Supported Module Timing at 600.0 MHz: 8-8-8-22
Supported Module Timing at 533.3 MHz: 7-7-7-20
Supported Module Timing at 466.7 MHz: 7-7-7-17
Supported Module Timing at 400.0 MHz: 6-6-6-15
Supported Module Timing at 333.3 MHz: 5-5-5-12
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns
Minimum Active to Active/Refresh Time (tRCmin): 49.125 ns
Minimum Refresh Recovery Time Delay (tRFCmin): 160.000 ns
Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns
[Features]
Partial Array Self Refresh (PASR): Not Supported
On-die Thermal Sensor (ODTS) Readout: Not Supported
Auto Self Refresh (ASR): Not Supported
Extended Temperature 1X Refresh Rate: Not Supported
Extended Temperature Range: Supported
Module Temperature Sensor: Not Supported
Pseudo Target Row Refresh (pTRR): Not Supported
Module Nominal Height: 29 - 30 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm



Intel HD Graphics 3000

[Video chipset]
Video Chipset: Intel HD Graphics 3000
Video Chipset Codename: Sandy Bridge GT2
Video Memory: 2108 MBytes
[Video Card]
Video Card: Intel Sandy Bridge-MB GT2 - Integrated Graphics Controller [D2/J1/Q0] [Samsung Electronics]
Video Bus: Integrated
Video RAMDAC: Integrated RAMDAC
Video BIOS Version: 2098-01 Veyron-R Europa-R Amor PC 14.34
[Performance]
Processor Clock: 648.6 MHz
Memory Clock: 665.0 MHz
Hardware ID: PCI\VEN_8086&DEV_0116&SUBSYS_C0C1144D&REV_09
PCI Location (Bus:Dev:Fnc): 0:02:0
[Driver Information]

NVIDIA GeForce GT 540M

[Video chipset]
Video Chipset: NVIDIA GeForce GT 540M
Video Chipset Codename: GF108M
Video Memory: 2048 MBytes of DDR3 SDRAM [Samsung]
[Video Card]
Video Card: NVIDIA GeForce GT 540M [Samsung]
Video Bus: PCIe v1.1 x16 (2.5 GT/s) @ x16 (2.5 GT/s)
Video BIOS Version: 70.08.58.00.03
Video Chipset Revision: A1
[Performance]
Processor Clock: 202.5 MHz
Shader Unit Clock: 405.0 MHz
Video Unit Clock: 405.0 MHz
Memory Clock: 324.0 MHz (Effective 648.0 MHz)
Memory Bus Width: 128-bit
Number Of ROPs: 4
Number Of Unified Shaders: 96
Number Of TMUs (Texture Mapping Units): 16
ASIC Quality: 74.0 %
NVIDIA SLI Capability: Capable
Hardware ID: PCI\VEN_10DE&DEV_0DF4&SUBSYS_C0C1144D&REV_A1
PCI Location (Bus:Dev:Fnc): 1:00:0

[Archetipo]

[Archetipo]

[geeno88]

[Archetipo]

Ma se il problema fosse Windows... hai provato ad utilizzare una chiavetta boot usb con Linux e vedere se ti va a scatti?

[geeno88]

[Archetipo]

Non ti resta che cambiare hardware allora..

[geeno88]